JPH0747896Y2 - 半導体レーザ装置 - Google Patents
半導体レーザ装置Info
- Publication number
- JPH0747896Y2 JPH0747896Y2 JP1988108106U JP10810688U JPH0747896Y2 JP H0747896 Y2 JPH0747896 Y2 JP H0747896Y2 JP 1988108106 U JP1988108106 U JP 1988108106U JP 10810688 U JP10810688 U JP 10810688U JP H0747896 Y2 JPH0747896 Y2 JP H0747896Y2
- Authority
- JP
- Japan
- Prior art keywords
- laser
- semiconductor
- output
- laser light
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 101
- 239000000758 substrate Substances 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 19
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 9
- 238000001514 detection method Methods 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988108106U JPH0747896Y2 (ja) | 1988-08-17 | 1988-08-17 | 半導体レーザ装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1988108106U JPH0747896Y2 (ja) | 1988-08-17 | 1988-08-17 | 半導体レーザ装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0229551U JPH0229551U (en]) | 1990-02-26 |
JPH0747896Y2 true JPH0747896Y2 (ja) | 1995-11-01 |
Family
ID=31343130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1988108106U Expired - Lifetime JPH0747896Y2 (ja) | 1988-08-17 | 1988-08-17 | 半導体レーザ装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0747896Y2 (en]) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62118470U (en]) * | 1986-01-20 | 1987-07-28 | ||
JPS62145358U (en]) * | 1986-03-10 | 1987-09-12 |
-
1988
- 1988-08-17 JP JP1988108106U patent/JPH0747896Y2/ja not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH0229551U (en]) | 1990-02-26 |
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